Method of forming oxide isolation
US5236862A · kind A · utility
19Cited by
8References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 1992 |
| Grant date | Aug 17, 1993 |
| Priority date | — |
| Expiry date | Dec 3, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Defect-free field oxide isolation (34) is formed by oxidizing through a silicon nitride layer (30) which overlies the isolation regions (22) of the silicon substrate (12). Additionally, the silicon nitride layer (30) acts as a diffusion barrier during field growth, and thus inhibits the lateral diffusion of oxygen underneath the oxidation mask (18). Therefore, field oxide encroachment into the adjacent active regions is effectively reduced. Moreover, field oxide encroachment is also reproducibly controlled, and therefore integrated circuits with high device packing densities can be fabricated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.