Anisotropic titanate etch
US5238530A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 20, 1992 |
| Grant date | Aug 24, 1993 |
| Priority date | — |
| Expiry date | Apr 20, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A titanate substrate (e.g. lead zirconate titanate 34) is immersed in a liquid ambient (e.g. 12 molar concentration hydrochloric acid 30) and illuminated with radiation (e.g. collimated visible/ultraviolet radiation 24) produced by a radiation source (e.g. a 200 Watt mercury xenon arc lamp 20). A window 26 which is substantially transparent to the collimated radiation 24 allows the radiated energy to reach the titanate substrate 34. An etch mask 32 may be positioned between the radiation source 20 and the substrate 34. The titanate substrate 34 and liquid ambient 30 are maintained at a nominal temperature (e.g. 25.degree. C.). Without illumination, the titanate is not appreciably etched by the liquid ambient. Upon illumination the etch rate is substantially increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.