Silicon photodiode for monolithic integrated circuits

US5239193A · kind A · utility

Assignee

• AT&T Bell Laboratories · US

Inventors

• Janet L. Benton · Plano, US
• Renuka P. Jindal · Princeton, US
• Ya-Hong Xie · Flemington, US

Key dates

• Filing date: May 11, 1992
• Grant date: Aug 24, 1993
• Expiry date: May 11, 2012

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

An integrated photodiode is formed by providing a silicon substrate with a deep recessed tub in excess of about 20 microns, forming an isolated p-n junction on the peripheral tub surfaces, and selectively epitaxially filling the tub with intrinsic silicon. A desired monolithic integrated circuit is fabricated outside the tub periphery using conventional VLSI techniques. A photodiode electrode structure within the tub periphery can be fabricated at the same time as other monolithic circuit components are formed.