Method for forming a semiconductor device
US5240558A · kind A · utility
20Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 27, 1992 |
| Grant date | Aug 31, 1993 |
| Priority date | — |
| Expiry date | Oct 27, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/947
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The surface area of a polysilicon electrode is increased by sputtering non-coalescing islands (20) of aluminum onto a silicon dioxide layer (18), which is overlying the polysilicon electrode. The sputtering process allows uniform island formation to be achieved independent of the deposition surface. The non-coalescing islands are then used as a mask, and a portion of the buffer layer (22) and a portion of the polysilicon electrode (26) are etched to form pillar-like regions (30) within the polysilicon electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.