Hisao Kawasaki
27Patents
10h-index
22Co-inventors
75Inventor score
Filing activity: Apr 1, 1991 → Oct 24, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5483094A | Electrically programmable read-only memory cell | Electricity | 113 | Expired |
| US5382540A | Process for forming an electrically programmable read-only memory cell | Electricity | 83 | Expired |
| US5420072A | Method for forming a conductive interconnect in an integrated circuit | Electricity | 71 | Expired |
| US5358901A | Process for forming an intermetallic layer | Emerging Cross-Sectional Technologies | 42 | Expired |
| US5506450A | Semiconductor device with improved electromigration resistance and method for making the same | Emerging Cross-Sectional Technologies | 33 | Expired |
| US5190893A | Process for fabricating a local interconnect structure in a semiconductor device | Electricity | 26 | Expired |
| US5393703A | Process for forming a conductive layer for semiconductor devices | Emerging Cross-Sectional Technologies | 24 | Expired |
| US5593919A | Process for forming a semiconductor device including conductive members | Electricity | 21 | Expired |
| US5240558A | Method for forming a semiconductor device | Emerging Cross-Sectional Technologies | 20 | Expired |
| US5317185A | Semiconductor device having structures to reduce stress notching effects in conductive lines and method for making the same | Electricity | 10 | Expired |
| US5623166A | Al-Ni-Cr conductive layer for semiconductor devices | Emerging Cross-Sectional Technologies | 8 | Expired |
| US8587094B2 | Semiconductor device using a compound semiconductor subtrate | Electricity | 7 | Active |
| US6218733A | Semiconductor device having a titanium-aluminum compound | Emerging Cross-Sectional Technologies | 7 | Expired |
| US7888713B2 | Semiconductor device and manufacturing method thereof | Electricity | 3 | Active |
| US8253169B2 | Semiconductor device and manufacturing method for semiconductor device | Electricity | 3 | Active |
| US8159027B2 | Semiconductor device | Electricity | 2 | Active |
| US7622776B2 | Semiconductor device | Electricity | 2 | Active |
| US8030691B2 | Semiconductor device and manufacturing method therefor | Electricity | 1 | Active |
| US7829919B2 | Semiconductor device | Electricity | 1 | Active |
| US8735943B2 | Semiconductor device with recess having inclined sidewall and method for manufacturing the same | Electricity | 1 | Active |
| US8338866B2 | Microwave semiconductor device using compound semiconductor and method for manufacturing the same | Electricity | 0 | Active |
| US8202798B2 | Improvements for reducing electromigration effect in an integrated circuit | Electricity | 0 | Active |
| US8307319B2 | Integrated circuit reliability | Emerging Cross-Sectional Technologies | 0 | Active |
| US7595531B2 | Semiconductor device | Electricity | 0 | Active |
| US8084793B2 | Microwave semiconductor device using compound semiconductor and method for manufacturing the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.