Enhanced superconducting field-effect transistor

US5240906A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Johannes G. Bednorz · Adliswil, CH
• Jochen Mannhart · Eppelheim, DE
• Carl A. Mueller · Hedingen, CH
• Darrell G. Schlom · Thalwil, CH

Key dates

• Filing date: Apr 7, 1992
• Grant date: Aug 31, 1993
• Expiry date: Apr 7, 2012

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S505/729

Abstract

An inverted MISFET structure with a high transition temperature superconducting channel comprises a gate substrate, an interfacial layer with one or more elements of the VIII or IB subgroup of the periodic table of elements, an insulating layer and a high transition temperature superconducting channel. An electric field, generated by a voltage applied to its gate alters the conductivity of the channel.