Jochen Mannhart
21Patents
8h-index
24Co-inventors
75Inventor score
Filing activity: Feb 16, 1988 → Jul 3, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5240906A | Enhanced superconducting field-effect transistor | Emerging Cross-Sectional Technologies | 24 | Expired |
| US5266558A | Superconducting circuit elements with metallic substrate and method for manufacturing the same | Emerging Cross-Sectional Technologies | 17 | Expired |
| US6211673A | Apparatus for use in magnetic-field detection and generation devices | Emerging Cross-Sectional Technologies | 15 | Expired |
| US9865789B2 | Device and method for thermoelectronic energy conversion | Electricity | 11 | Active |
| US5162298A | Grain boundary junction devices using high T.sub.c superconductors | Emerging Cross-Sectional Technologies | 11 | Expired |
| US5278140A | Method for forming grain boundary junction devices using high T.sub.c superconductors | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6782282B2 | Superconductor system with enhanced current carrying capability | Emerging Cross-Sectional Technologies | 8 | Expired |
| US5602080A | Method for manufacturing lattice-matched substrates for high-T.sub.c superconductor films | Emerging Cross-Sectional Technologies | 8 | Expired |
| US5278136A | Method for making a superconducting field-effect transistor with inverted MISFET structure | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6111268A | Electronic device | Electricity | 5 | Expired |
| US5310706A | Method for manufacturing high T.sub.c superconducting circuit elements with metallic substrate | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6699820B2 | Method for making a superconductor with enhanced current carrying capability | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6573220B1 | Superconductor with enhanced current density and method for making such a superconductor | Emerging Cross-Sectional Technologies | 1 | Expired |
| US5376569A | Superconducting field-effect transistors with inverted MISFET structure and method for making the same | Emerging Cross-Sectional Technologies | 1 | Expired |
| US5528052A | Superconductive-channel electric field-effect drive | Electricity | 1 | Expired |
| US5382565A | Superconducting field-effect transistors with inverted MISFET structure | Emerging Cross-Sectional Technologies | 1 | Expired |
| US11342645B2 | Non-reciprocal filters for matter waves | Electricity | 0 | Active |
| US7618923B2 | Method for making a superconductor with improved microstructure | Emerging Cross-Sectional Technologies | 0 | Expired |
| US11569918B2 | Nonreciprocal quantum device using quantum wave collapse, interference and selective absorption | Performing Operations; Transporting | 0 | Active |
| US11595133B2 | Non-reciprocal device comprising asymmetric phase transport of waves | Physics | 0 | Active |
| US12288816B2 | Magnetic-field free, nonreciprocal, solid state quantum device using quantum wave collapse and interference | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.