Plasma treatment method and apparatus
US5242539A · kind A · utility
558Cited by
4References
76Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 1992 |
| Grant date | Sep 7, 1993 |
| Priority date | — |
| Expiry date | Mar 27, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3343
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma treatment method and apparatus utilize various gas inlet and outlet structure arrangements to optimize treatment characteristics for a semiconductor wafer. A buffer zone is created between gas inlets and the discharge zone of the vacuum treatment chamber to enhance uniformity of gas flow. The evacuation arrangement enables reactant gas to be exhausted uniformly to reduce gas residence time below a threshold while maintaining optimum flow rates and etch uniformity at low effective exhaust speeds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.