High performance semiconductor devices and their manufacture
US5242854A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 1992 |
| Grant date | Sep 7, 1993 |
| Priority date | — |
| Expiry date | May 7, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high performance bipolar transistor and a method of fabrication. Base resistance is reduced by a self-aligned silicide formed in the single-crystal region of the extrinsic base, thereby eliminating the polysilicon to single-crystal contact resistance as well as shunting the resistance of the single-crystal extrinsic base region. Oxide from the sidewall of the polysilicon local interconnection is selectively removed prior to silicide formation. Therefore, selected sidewalls of the poly interconnect layer also becomes silicided. This results in significant reductions in resistance of the interconnection, particularly for submicron geometries. Improved techniques for forming field oxide regions and for forming base regions of bipolar transistors are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.