Christopher S. Blair
20Patents
12h-index
24Co-inventors
81Inventor score
Filing activity: Apr 2, 1990 → Dec 13, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5998873A | Low contact resistance and low junction leakage metal interconnect contact structure | Electricity | 70 | Expired |
| US6136705A | Self-aligned dual thickness cobalt silicide layer formation process | Electricity | 52 | Expired |
| US5338696A | Method of fabricating BiCMOS device | Emerging Cross-Sectional Technologies | 30 | Expired |
| US5139961A | Reducing base resistance of a BJT by forming a self aligned silicide in the single crystal region of the extrinsic base | Emerging Cross-Sectional Technologies | 20 | Expired |
| US6103610A | Integrated circuit structure with dual thickness cobalt silicide layers and method for its manufacture | Electricity | 20 | Expired |
| US6171901A | Process for forming silicided capacitor utilizing oxidation barrier layer | Electricity | 19 | Expired |
| US6040606A | Integrated circuit structure with dual thickness cobalt silicide layers and method for its manufacture | Electricity | 17 | Expired |
| US5045483A | Self-aligned silicided base bipolar transistor and resistor and method of fabrication | Emerging Cross-Sectional Technologies | 16 | Expired |
| US5451546A | Masking method used in salicide process for improved yield by preventing damage to oxide spacers | Electricity | 15 | Expired |
| US5661046A | Method of fabricating BiCMOS device | Emerging Cross-Sectional Technologies | 15 | Expired |
| US5338694A | Method of fabricating BiCMOS device | Emerging Cross-Sectional Technologies | 13 | Expired |
| US6303503A | Process for the formation of cobalt salicide layers employing a sputter etch surface preparation step | Emerging Cross-Sectional Technologies | 12 | Expired |
| US5882976A | Method of fabricating a self-aligned double polysilicon NPN transistor with poly etch stop | Electricity | 10 | Expired |
| US5242854A | High performance semiconductor devices and their manufacture | Electricity | 8 | Expired |
| US5904536A | Self aligned poly emitter bipolar technology using damascene technique | Emerging Cross-Sectional Technologies | 7 | Expired |
| US9673316B1 | Vertical semiconductor device having frontside interconnections | Electricity | 6 | Active |
| US9209091B1 | Integrated monolithic galvanic isolator | Electricity | 4 | Active |
| US5925923A | Merged single polysilicon bipolar NPN transistor | Electricity | 4 | Expired |
| US8624349B1 | Simultaneous isolation trench and handle wafer contact formation | Electricity | 3 | Active |
| US8963281B1 | Simultaneous isolation trench and handle wafer contact formation | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.