Semiconductor device and method of manufacturing same
US5242862A · kind A · utility
22Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 8, 1991 |
| Grant date | Sep 7, 1993 |
| Priority date | — |
| Expiry date | Feb 8, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground surface formed on another surface of the N-type semiconductor substrate, a second electrode formed on the ground surface and ohmically-contacted with the N-type semiconductor substrate, a semiconductor element formed in the N-type semiconductor substrate and flowing current between the first electrode and the second electrode during ON-state thereof. The device has a reduced ON-resistance thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.