Akira Kuroyanagi
43Patents
14h-index
45Co-inventors
81Inventor score
Filing activity: Dec 8, 1987 → Jun 15, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5877095A | Method of fabricating a semiconductor device having a silicon nitride film made of silane, ammonia and nitrogen | Electricity | 542 | Expired |
| US4975390A | Method of fabricating a semiconductor pressure sensor | Emerging Cross-Sectional Technologies | 80 | Expired |
| US5250449A | Vertical type semiconductor device and method for producing the same | Emerging Cross-Sectional Technologies | 31 | Expired |
| US6469345B2 | Semiconductor device and method for manufacturing the same | Electricity | 30 | Expired |
| US8076718B2 | Insulated gate semiconductor device and method for producing the same | Electricity | 30 | Active |
| US5017979A | EEPROM semiconductor memory device | Electricity | 29 | Expired |
| US5470771A | Method of manufacturing a floating gate memory device | Electricity | 24 | Expired |
| US5689130A | Vertical semiconductor device with ground surface providing a reduced ON resistance | Emerging Cross-Sectional Technologies | 24 | Expired |
| US5654560A | Semiconductor device with current detecting function and method of producing the same | Emerging Cross-Sectional Technologies | 23 | Expired |
| US5242862A | Semiconductor device and method of manufacturing same | Emerging Cross-Sectional Technologies | 22 | Expired |
| US5063423A | Semiconductor memory device of a floating gate tunnel oxide type | Electricity | 17 | Expired |
| US5410171A | Vertical type semiconductor with main current section and emulation current section | Electricity | 17 | Expired |
| US5714408A | Method of forming silicon nitride with varied hydrogen concentration | Emerging Cross-Sectional Technologies | 17 | Expired |
| US7470953B2 | Insulated gate type semiconductor device and manufacturing method thereof | Electricity | 15 | Expired |
| US7586151B2 | Insulated gate semiconductor device | Electricity | 14 | Expired |
| US5550067A | Method for producing semiconductor device having DMOS and NMOS elements formed in the same substrate | Electricity | 14 | Expired |
| US5453390A | Method of producing semiconductor device with current detecting function | Emerging Cross-Sectional Technologies | 12 | Expired |
| US5830771A | Manufacturing method for semiconductor device | Electricity | 11 | Expired |
| US5798550A | Vertical type semiconductor device and gate structure | Electricity | 11 | Expired |
| US6809348B1 | Semiconductor device and method for manufacturing the same | Electricity | 10 | Expired |
| US5663096A | Method of manufacturing a vertical semiconductor device with ground surface providing a reduced ON resistance | Emerging Cross-Sectional Technologies | 10 | Expired |
| US5462896A | Method of forming a sidewall on a semiconductor element | Electricity | 9 | Expired |
| US5592004A | Silicon nitride film having a short absorption wavelength and surrounding crystal-like grain boundaries | Electricity | 9 | Expired |
| US6946711B2 | Semiconductor device | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7354829B2 | Trench-gate transistor with ono gate dielectric and fabrication process therefor | Electricity | 6 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.