Semiconductor device with overvoltage protective function
US5243205A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 1992 |
| Grant date | Sep 7, 1993 |
| Priority date | — |
| Expiry date | Jun 18, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a photothyristor, a main thyristor consisting of a P emitter layer, an N base layer, a P gate base layer and an N emitter layer is formed on a semiconductor substrate. Also a pilot thyristor surrounded with the main thyristor and consisting of a P emitter layer, an N base layer, a P gate base layer and an N emitter layer is formed. In the P gate base layer, a trigger light irradiation surface including the inner surface of a recess is formed on the center of the pilot thyristor. In the N base layer, a crystal defect layer is formed under the trigger light irradiation surface by the irradiation with a radiant ray. A breakdown voltage to protect the thyristor from overvoltage is controlled by the crystal defect layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.