Apparatus for chemical vapor deposition
US5244501A · kind A · utility
37Cited by
3References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 22, 1991 |
| Grant date | Sep 14, 1993 |
| Priority date | — |
| Expiry date | Jul 22, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for a chemical vapor deposition in which at least one substrate which has partially an insulating film on the surface thereof is disposed in a pressure reduced reaction chamber, the reaction chamber is provided with a nozzle for feeding a reactive gas into the reaction chamber, and a light source is provided for emitting a light beam to heat the substrate. The combination of substrate heating source using infrared rays and a laminarized jet of reactive gas is utilized for maintaining the selectivity, facilitating the thin film forming reaction, and improving the high reproducibility and controllability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.