Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method
US5244820A · kind A · utility
56Cited by
6References
37Claims
0Family size
Inventors
Key dates
| Filing date | Aug 3, 1992 |
| Grant date | Sep 14, 1993 |
| Priority date | — |
| Expiry date | Aug 3, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/083
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to an ion implantation process in a wafer process for a semiconductor integrated circuit device. Particularly, according to the present invention, a shallow junction can be formed by performing the implantation of ion while holding a wafer to be processed at a low temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.