Method of doping a polysilicon layer on a semiconductor wafer
US5244831A · kind A · utility
7Cited by
7References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 4, 1992 |
| Grant date | Sep 14, 1993 |
| Priority date | — |
| Expiry date | May 4, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/123
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention concerns a method for doping a polysilicon layer with phosphorous in which phosphorous oxychloride is supplied to the silicon wafer near the beginning of the oven temperature ramping of the silicon wafer. By introducing the phosphorous oxychloride earlier than in prior art methods, the present invention can reduce the poly rho and poly rho sigma of the doped polysilicon layer. Alternatively, the root DT of the diffusion of the doped material in the doped silicon region on the silicon wafer can be reduced, which helps to maintain the junction depth of the doped silicon region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.