Semiconductor hybrids and method of making same

US5244839A · kind A · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• James C. Baker · Coppell, US
• Emily A. Groves · Sachse, US
• Douglas E. Paradis · Richardson, US
• Charles P. Monaghan · Garland, US
• Barry Lanier · Allen, US
• Thomas D. Bonifield · Dallas, US
• Julie S. England · Dallas, US
• Glenn A. Cerny · Canton, US

Key dates

• Filing date: Jun 18, 1991
• Grant date: Sep 14, 1993
• Expiry date: Jun 18, 2011

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31051
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of making a hybrid semiconductor device and the device comprising providing a semiconductor substrate having electrical devices therein, providing a first resilient layer of electrically insulating material over the substrate which can be disposed directly onto the substrate with a substantially planar exposed surface, providing a second resilient layer of electrically insulating material over the first resilient layer which can be disposed directly onto the first layer with a substantially planar exposed surface, the second layer having a relatively resilient state and a rigid state, providing resilient standoff from the third resilient layer at spaced locations on the second layer by removing predetermined portions of the third layer, securing a semiconductor superstrate to the semiconductor device, forming electrical devices on the superstrate, and then connecting the electrical devices on the superstrate to the electrical devices on the substrate.