Capping layer preventing deleterious effects of As--P exchange
US5246878A · kind A · utility
4Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 1992 |
| Grant date | Sep 21, 1993 |
| Priority date | — |
| Expiry date | Mar 27, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A III-V semiconductor heterojunction in which a capping layer (14) is formed between the two layers (10, 16) of the heterojunction to prevent any deleterious effects due to As--P exchange. When InAlAs is grown on InP, the capping layer is AlP. When GaAs is grown on GaInP, the capping layer is GaP.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.