CVD diamond or diamond-like carbon for chemical-mechanical polish etch stop
US5246884A · kind A · utility
128Cited by
2References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 1991 |
| Grant date | Sep 21, 1993 |
| Priority date | — |
| Expiry date | Oct 30, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76819
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Metallized semiconductor chips, such as are intended for VLSI, are coated with a first layer of SiO2 followed by a second layer of CVD diamond or DLC as an etch stop. The resulting structure is reproducibly and controllably planarized using a chem-mech slurry and an appropriate polishing pad, enabling subsequent layers to be built up similarly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.