Mark A. Jaso
26Patents
17h-index
46Co-inventors
77Inventor score
Filing activity: Apr 4, 1991 → Aug 29, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5246884A | CVD diamond or diamond-like carbon for chemical-mechanical polish etch stop | Electricity | 128 | Expired |
| US6093631A | Dummy patterns for aluminum chemical polishing (CMP) | Emerging Cross-Sectional Technologies | 66 | Expired |
| US5894152A | SOI/bulk hybrid substrate and method of forming the same | Electricity | 65 | Expired |
| US5055158A | Planarization of Josephson integrated circuit | Emerging Cross-Sectional Technologies | 64 | Expired |
| US6025226A | Method of forming a capacitor and a capacitor formed using the method | Electricity | 63 | Expired |
| US6045434A | Method and apparatus of monitoring polishing pad wear during processing | Performing Operations; Transporting | 48 | Expired |
| US6632377B1 | Chemical-mechanical planarization of metallurgy | Electricity | 47 | Expired |
| US5573633A | Method of chemically mechanically polishing an electronic component | Electricity | 45 | Expired |
| US6107125A | SOI/bulk hybrid substrate and method of forming the same | Electricity | 34 | Expired |
| US5854140A | Method of making an aluminum contact | Electricity | 34 | Expired |
| US5656535A | Storage node process for deep trench-based DRAM | Emerging Cross-Sectional Technologies | 31 | Expired |
| US6186864A | Method and apparatus for monitoring polishing pad wear during processing | Performing Operations; Transporting | 31 | Expired |
| US6166423A | Integrated circuit having a via and a capacitor | Electricity | 31 | Expired |
| US6344409B1 | Dummy patterns for aluminum chemical polishing (CMP) | Emerging Cross-Sectional Technologies | 25 | Expired |
| US5264387A | Method of forming uniformly thin, isolated silicon mesas on an insulating substrate | Emerging Cross-Sectional Technologies | 20 | Expired |
| US5726099A | Method of chemically mechanically polishing an electronic component using a non-selective ammonium persulfate slurry | Electricity | 17 | Expired |
| US6153474A | Method of controllably forming a LOCOS oxide layer over a portion of a vertically extending sidewall of a trench extending into a semiconductor substrate | Emerging Cross-Sectional Technologies | 17 | Expired |
| US6811657B2 | Device for measuring the profile of a metal film sputter deposition target, and system and method employing same | Chemistry; Metallurgy | 13 | Expired |
| US6136686A | Fabrication of interconnects with two different thicknesses | Electricity | 13 | Expired |
| US5795826A | Method of chemically mechanically polishing an electronic component | Electricity | 9 | Expired |
| US6114248A | Process to reduce localized polish stop erosion | Electricity | 3 | Expired |
| US5885899A | Method of chemically mechanically polishing an electronic component using a non-selective ammonium hydroxide slurry | Electricity | 3 | Expired |
| US7974505B2 | Method for fabricating selectively coupled optical waveguides on a substrate | Physics | 3 | Active |
| US6974524B1 | Apparatus, method and system for monitoring chamber parameters associated with a deposition process | Chemistry; Metallurgy | 2 | Expired |
| US8192638B2 | Method for manufacturing multiple layers of waveguides | Physics | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.