Method of depositing conductive lines on a dielectric
US5250329A · kind A · utility
59Cited by
16References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 1992 |
| Grant date | Oct 5, 1993 |
| Priority date | — |
| Expiry date | Nov 13, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/146
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of depositing micron-sized metal lines on a dielectric substrate, such as polyimide. The dielectric is covered with a thin metallic layer, of a first metal placed in a reaction cell containing a gas-phase molecular species containing a second metal, and exposed to a focused laser beam. A translation stage moves the dielectric relative to the beam to selectively deposit micron-sized second metal lines on the metallic layer. The metallic layer on the unirradiated portion of the substrate is subsequently etched away, leaving the lines adhered to the dielectric surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.