Method for fabricating an optical semiconductor device
US5250462A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 1991 |
| Grant date | Oct 5, 1993 |
| Priority date | — |
| Expiry date | Aug 26, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/026
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for fabricating an optical semiconductor device includes the steps of forming at least two stripes of dielectric parallel to each other with a predetermined interval on a semiconductor substrate, growing a crystal selectively between the two stripes, and forming a multi-layer structure which is required to have a width determined by the crystal grown between the two stripes. In such a method, the width of the multi-layer structure including an active layer or a waveguide is controlled precisely, because there is no step of etching a semiconductor layer, so that the characteristics of the device may improve and the yield may increase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.