Electronic power device having plural elementary semiconductor components connected in parallel
US5250821A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jan 9, 1992 |
| Grant date | Oct 5, 1993 |
| Priority date | — |
| Expiry date | Jan 9, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13055
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Plural modular elementary semiconductor power components are respectively contained within plural semiconductor chip regions of a same semiconductor slice. A metallic layer covers a first surface of the semiconductor slice and is commonly connected to anode electrodes of the plural elementary power components. Plural space apart quadrangular metallic layer regions respectively cover the plural semiconductor chip regions on a second surface of the semiconductor slice and are respectively connected to cathode electrodes of the plural elementary power components. Plural first metallic tracks are spaced apart from and surround the respective plural metallic layer regions on the second surface of the semiconductor slice. Each respective first metallic track is connected to a control electrode of the elementary power component contained within the semiconductor chip regions surrounded by the respective first metallic track. Plural second metallic tracks extend spaced apart from and between the plural first metallic tracks to form a lattice configuration on the second surface of the semiconductor slice. Plural fuse elements, for selectively isolating defective elementary power components,…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.