JJ-MOS read access circuit for MOS memory
US5253199A · kind A · utility
13Cited by
4References
24Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 17, 1991 |
| Grant date | Oct 12, 1993 |
| Priority date | — |
| Expiry date | Jun 17, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/44
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Apparatus for selecting memory cells in a MOS memory array and reading data contained therein. Superconducting Josephson junction devices switch between a superconducting and voltage gap mode for rapid selection of an addressed memory cell row and column, and then read out of the selected memory cell data contained therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.