Semiconductor integrated circuit device and memory consisting of semiconductor integrated circuit
US5255225A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Mar 4, 1992 |
| Grant date | Oct 19, 1993 |
| Priority date | — |
| Expiry date | Mar 4, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/1084
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit device including a level conversion circuit in which the simplifying of the circuit and the increasing of the speed of operation have been attained is provided. A pair of complementary output signals amplified to a required signal level by a current switch circuit including differential transistors which receive an input signal and a reference voltage are inputted into a pair of emitter follower circuits. An emitter follower output transistor is driven by an output signal from one emitter follower circuit, while an N-channel MOSFET provided between the output transistor and a current source used as a load is driven by an output signal from the other emitter follower circuit, to obtain a level-amplified output signal from an emitter of the output transistor. The speed of an operation of the circuit device can be increased to a high level owing to a simple circuit in which a level, which is required to attain an output amplitude, of complementary output signals is secured by the current switch circuit, the amplified complementary signals being inputted into the emitter follower circuit to directly drive the output transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.