Semiconductor laser device, and a method for producing a compound semiconductor device including the semiconductor laser device
US5255279A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 9, 1991 |
| Grant date | Oct 19, 1993 |
| Priority date | — |
| Expiry date | May 9, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/095
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
On a GaAs substrate (Al.sub.Y Ga.sub.1-Y).sub.0.5 In.sub.0.5 P crystal layers (0.ltoreq.Y.ltoreq.1) is formed to be lattice-matched with the substrate. By radiating As molecular beams on the surface of the crystal layers while heating the layered substrate to a temperature at which In in the crystal layers evaporates, the portion near the surface of the crystal layers is changed into an Al.sub.Y Ga.sub.1-Y As crystal layer (0.ltoreq.Y.ltoreq.1) of a thickness of several molecules, on which layer an Al.sub.X Ga.sub.1-X As crystal layer (0.ltoreq.X.ltoreq.1) is formed. Since the surface of the Al.sub.Y Ga.sub.1-Y As crystal layer has been purified, the formed Al.sub.X Ga.sub.1-X As crystal layer has a high crystallinity, allowing production of a light emitting diode, a semiconductor laser device and the like with high efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.