Method of forming film of tantalum oxide by plasma chemical vapor deposition
US5256455A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 27, 1992 |
| Grant date | Oct 26, 1993 |
| Priority date | — |
| Expiry date | Jan 27, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/5096
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing a thin film of tantalum oxide (Ta.sub.2 O.sub.5) with a large capacitance per unit area on a silicon surface by a plasma CVD process. The plasma used in the CVD process is generated by a high-frequency energy with a gas containing tantalum chloride (TaCl.sub.5) and dinitrogen oxide (N.sub.2 O). The intensity of the high-frequency energy increases from the start of the formation of the film of tantalum oxide until the end of the formation of the film. Increasing the intensity of the energy causes suppression of the growth of silicon oxide layers which are generated with the reactive plasma sputtering process going at the same time with the CVD process on the silicon surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.