Youichirou Numasawa
3Patents
3h-index
3Co-inventors
39Inventor score
Filing activity: Jan 27, 1992 → Feb 9, 2000
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5256455A | Method of forming film of tantalum oxide by plasma chemical vapor deposition | Chemistry; Metallurgy | 27 | Expired |
| US6506662B2 | Method for forming an SOI substrate by use of a plasma ion irradiation | Electricity | 7 | Expired |
| US5306672A | Method of manufacturing a semiconductor device wherein natural oxide film is removed from the surface of silicon substrate with HF gas | Emerging Cross-Sectional Technologies | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.