Method for manufacturing semiconductor device having a contact structure
US5256564A · kind A · utility
9Cited by
4References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 22, 1992 |
| Grant date | Oct 26, 1993 |
| Priority date | — |
| Expiry date | May 22, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to prevent a passivation film on an inner wall of a contact hole from being thinned to thereby improve an ability of the passivation film, an interlayer insulating film is formed on a semiconductor substrate in a surface region of which a diffusion layer is formed and a contact hole is formed therethrough to expose the diffusion layer. An aluminum wiring layer covering the inner wall of the contact hole and in contact with the diffusion layer is formed, on which a first thin passivation film is formed. After burying the contact hole with a polyimide layer, a second thick passivation film is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.