Kaoru Narita
41Patents
12h-index
18Co-inventors
78Inventor score
Filing activity: Jun 4, 1991 → Jan 17, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7952365B2 | Resonator, printed board, and method for measuring complex dielectric constant | Electricity | 118 | Active |
| US5449939A | Semiconductor device having a protective transistor | Electricity | 42 | Expired |
| US5170232A | MOS field-effect transistor with sidewall spacers | Emerging Cross-Sectional Technologies | 38 | Expired |
| US5717559A | Input/output protection device for use in semiconductor device | Electricity | 30 | Expired |
| US5307310A | Semiconductor memory having stacked capacitors and MOS transistors | Emerging Cross-Sectional Technologies | 27 | Expired |
| US8035992B2 | Vertical transitions, printed circuit boards therewith and semiconductor packages with the printed circuit boards and semiconductor chip | Electricity | 23 | Active |
| US7868257B2 | Via transmission lines for multilayer printed circuit boards | Electricity | 20 | Active |
| US7463122B2 | Compact via transmission line for printed circuit board and its designing method | Electricity | 19 | Expired |
| US5844281A | Semiconductor integrated circuit device with electrostatic protective function | Electricity | 17 | Expired |
| US5923079A | Single-chip system having electrostatic discharge (ESD) protective circuitry including a single bipolar transistor portion | Electricity | 16 | Expired |
| US5859451A | Semiconductor memory having storage capacitor connected to diffusion region through barrier layer | Electricity | 16 | Expired |
| US5706156A | Semiconductor device having an ESD protective circuitry | Electricity | 14 | Expired |
| US5710452A | Semiconductor device having electrostatic breakdown protection circuit | Electricity | 12 | Expired |
| US5828107A | Semiconductor integrated circuit device | Electricity | 12 | Expired |
| US5559362A | Semiconductor device having double metal connection layers connected to each other and to the substrate in the scribe line area | Electricity | 12 | Expired |
| US5910675A | Semiconductor device and method of making the same | Electricity | 10 | Expired |
| US5256564A | Method for manufacturing semiconductor device having a contact structure | Electricity | 9 | Expired |
| US7750765B2 | Compact via transmission line for printed circuit board and design method of the same | Electricity | 9 | Active |
| US6191633A | Semiconductor integrated circuit with protection circuit against electrostatic discharge | Electricity | 8 | Expired |
| US5521413A | Semiconductor device having a solid metal wiring with a contact portion for improved protection | Electricity | 8 | Expired |
| US6777723B1 | Semiconductor device having protection circuit implemented by bipolar transistor for discharging static charge current and process of fabrication | Electricity | 7 | Expired |
| US5724219A | Electrostatic protection circuit comprising plurality of protective elements | Electricity | 7 | Expired |
| US5875086A | Semiconductor integrated circuit device equipped with protective system for directly discharging surge voltage from pad to discharge line | Electricity | 6 | Expired |
| US5973901A | Semiconductor circuit device with high electrostatic breakdown endurance | Electricity | 6 | Expired |
| US5936283A | MOSFET for input/output protective circuit having a multi-layered contact structure with multiple contact holes on a single diffusion layer | Electricity | 6 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.