Method of making pin junction semiconductor device with RF deposited intrinsic buffer layer
US5256576A · kind A · utility
16Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 1992 |
| Grant date | Oct 26, 1993 |
| Priority date | — |
| Expiry date | Feb 14, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing thin film, photovoltaic devices of the type having an intrinsic semiconductor layer disposed between two oppositely charged doped, semiconductor layers. A buffer layer of intrinsic semiconductor material is RF deposited at the junction between a microwave deposited, base intrinsic layer and a layer of doped material. The cell produced by the method of the present invention has enhanced performance characteristics over cells having microwave deposited intrinsic layers with no barrier layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.