Method of manufacturing semiconductor devices including rounding of corner portions by etching
US5258332A · kind A · utility
82Cited by
8References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 8, 1993 |
| Grant date | Nov 2, 1993 |
| Priority date | — |
| Expiry date | Mar 8, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for rounding the corners of trench formed on the silicon substrate with metal, metal silicide or polycrystalline silicon thin film or the step portions of lead layers is provided. The steps of rounding are performed by chemical dry etching using a gas mixture of fluorine and oxygen. The abundance ratio of oxygen is determined to be one or more with respect to the fluorine. This method contributes significantly to the prevention of leakage current and the enhancement of insulating effect in the case of forming trench capacitors or the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.