MOS-type semiconductor integrated circuit device
US5258635A · kind A · utility
220Cited by
9References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 28, 1991 |
| Grant date | Nov 2, 1993 |
| Priority date | — |
| Expiry date | Aug 28, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/904
Abstract
A MOS-type semiconductor integrated circuit device is provided in which MOS transistors are formed in a vertical configuration. The MOS transistors are constituted by pillar layers formed on the substrate. The outer circumferential surfaces of the pillar layers are utilized to form the gates of the MOS transistors. Thus, large gate widths thereof can be obtained within a small area. As a result, the total chip area of the MOS transistors can be significantly reduced while maintaining a prescribed current-carrying capacity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.