Inventor · Yokohama, JP

Fujio Masuoka

394Patents
32h-index
87Co-inventors
93Inventor score

Filing activity: Oct 5, 1976 → Apr 27, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US4959812A Electrically erasable programmable read-only memory with NAND cell structure Physics 528 Expired
US4466081A Semiconductor memory device Physics 287 Expired
US5258635A MOS-type semiconductor integrated circuit device Emerging Cross-Sectional Technologies 220 Expired
US4939690A Electrically erasable programmable read-only memory with NAND cell structure that suppresses memory cell threshold voltage variation Physics 109 Expired
US6727544B2 Semiconductor memory including cell(s) with both charge storage layer(s) and control gate laterally surrounding island-like semiconductor layer Electricity 109 Expired
US5371024A Semiconductor device and process for manufacturing the same Electricity 87 Expired
US5523980A Semiconductor memory device Physics 79 Expired
US4943944A Semiconductor memory using dynamic ram cells Physics 74 Expired
US4460835A Semiconductor integrated circuit device with low power consumption in a standby mode using an on-chip substrate bias generator Electricity 72 Expired
US6870215B2 Semiconductor memory and its production process Physics 65 Expired
US4803529A Electrically erasable and electrically programmable read only memory Electricity 60 Expired
US6933556B2 Semiconductor memory with gate at least partially located in recess defined in vertically oriented semiconductor layer Electricity 58 Expired
US4706249A Semiconductor memory device having error detection/correction function Physics 57 Expired
US5615163A Semiconductor memory device Physics 56 Expired
US4926382A Divided bit line type dynamic random access memory with charging/discharging current suppressor Physics 55 Expired
US8039893B2 CMOS inverter coupling circuit comprising vertical transistors Electricity 54 Active
US4243997A Semiconductor device Electricity 53 Expired
US5075890A Electrically erasable programmable read-only memory with NAND cell Physics 52 Expired
US5453955A Non-volatile semiconductor memory device Physics 52 Expired
USRE35838E Electrically erasable programmable read-only memory with NAND cell structure General 52 Expired
US8080458B2 Semiconductor device and manufacturing method thereof Electricity 52 Active
US5831903A Electrically erasable programmable read-only memory with threshold value controller for data programming and method of programming the same Physics 52 Expired
US4687954A CMOS hysteresis circuit with enable switch or natural transistor Electricity 48 Expired
US5050125A Electrically erasable programmable read-only memory with NAND cellstructure Physics 44 Expired
US8188537B2 Semiconductor device and production method therefor Electricity 42 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.