Sensor
US5259247A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 27, 1992 |
| Grant date | Nov 9, 1993 |
| Priority date | — |
| Expiry date | Jan 27, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P15/0802
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensor for measuring pressure and acceleration is proposed; it has a monocrystalline silicon substrate (10) with a succession of thin films applied to its first primary surface. A deflectable membrane (12) in a frame (11) is structured out of the silicon substrate (10), and the membrane (12) is formed in the first primary surface. The membrane (12) has a reinforcement zone. In the succession of thin films that is applied to the first primary surface, there is a structure (50) having at least one first substructure, which is disposed parallel to the first primary surface of the silicon substrate (10). There is a gap between the first substructure and the silicon substrate (10). The first substructure is joined to the membrane (12) in the region of the reinforcement zone. It protrudes past the membrane (12) and extends at least partway over the frame (11). This first substructure forms one electrode of a capacitor. At least one first counterelectrode (161, 162) of the capacitor is disposed opposite the first substructure, in the region of the frame (11).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.