Charged particle beam exposure system and charged particle beam exposure method
US5260579A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 1992 |
| Grant date | Nov 9, 1993 |
| Priority date | — |
| Expiry date | Mar 13, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0435
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A charged particle beam exposure system is directed to an exposure process of an electron beam for sequentially scanning an electron beam employing a blanking aperture array including a plurality of blanking apertures. The system facilitates re-focusing for compensation of focus error due to Coulumb effect and makes wiring the blanking aperture array easier. The system further allows exposure without an irradiation gap. The blanking aperture array 6 is formed with a plurality of said blanking apertures 62 arranged in a two-dimensional configuration. A control system 24 controls the blanking aperture array 62 to set the blanking aperture to the ON state where the charged particle beams pass through the blanking aperture and reach the object 19 to be exposed or the OFF state where the charged particle beams cannot reach the object 19 to be exposed. The other control system of the control means performs a control so that a plurality of said charged particle beams that have passed through different blanking apertures of said blanking aperture array overlaps and is irradiated a plurality of times onto the specified position or the peripheral position in the vicinity of the specified pos…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.