Method for forming an interconnection structure for conductive layers
US5262352A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 1992 |
| Grant date | Nov 16, 1993 |
| Priority date | — |
| Expiry date | Aug 31, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect structure is formed having a substrate (10). A conductive layer (14) is formed overlying the substrate (10). A conductive layer (18) is formed overlying the conductive layer (14). An opening (19) is etched through the conductive layer (18), exposing a top portion of conductive layer (14), and forming a sidewall of the conductive layer (18). An selective isotropic etch procedure is used to laterally recess the sidewall of the conductive layer (18). A sidewall spacer (22) is formed adjacent the sidewall of the conductive layer (18). A conductive layer (24) is formed within opening (19) and adjacent the spacer (22) to form an interconnection between conductive layers (24 and 14). The interconnection is self-aligned, and conductive layer (18) is reliably isolated from the interconnect due to the lateral recessed sidewall of the conductive layer (18).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.