AlGaAs native oxide
US5262360A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 1991 |
| Grant date | Nov 16, 1993 |
| Priority date | — |
| Expiry date | Jun 24, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/118
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375.degree. C. to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.