Resist development endpoint detection for X-ray lithography
US5264328A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 1992 |
| Grant date | Nov 23, 1993 |
| Priority date | — |
| Expiry date | Apr 24, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/168
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a method for determining the development endpoint in a X-ray lithographic process. Endpoint is determined by visually observing resist test field patterns through a microscope during the developing step. During the developing, changing test field patterns are formed because test field locations each had been exposed simultaneously to different radiation doses. These different doses are produced when radiation passes through a mask containing a plurality of different size radiation attenuators. When the changing test field pattern matches a known pattern, which is correlated to the desired development endpoint, the workpiece is removed from the developing step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.