High voltage lateral semiconductor device
US5264719A · kind A · utility
56Cited by
5References
42Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 24, 1991 |
| Grant date | Nov 23, 1993 |
| Priority date | — |
| Expiry date | May 24, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
The present invention provides an improved lateral drift region for both bipolar and MOS devices where improved breakdown voltage and low ON resistance are desired. A top gate of the same conductivity type as the device region with which it is associated is provided along the surface of the substrate and overlying the lateral drift region. In an MOS device, the extremity of the lateral drift region curves up to the substrate surface beyond the extremity of the top gate to thereby provide contact between the JFET channel and the MOS channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.