Silicon nitride for application as the gate dielectric in MOS devices
US5264724A · kind A · utility
56Cited by
18References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 1990 |
| Grant date | Nov 23, 1993 |
| Priority date | — |
| Expiry date | May 29, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/91
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film layer of silicon nitride is deposited on silicon substrate by plasma enhanced chemical vapor deposition techniques is stabilized by post-deposition rapid thermal annealing at temperatures ranging from about 600.degree. C. to about 700.degree. C. and at times ranging from about 3 seconds to about 30 seconds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.