William D. Brown
15Patents
11h-index
15Co-inventors
69Inventor score
Filing activity: Feb 9, 1990 → Feb 10, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6544599B1 | Process and apparatus for applying charged particles to a substrate, process for forming a layer on a substrate, products made therefrom | Chemistry; Metallurgy | 86 | Expired |
| US5264724A | Silicon nitride for application as the gate dielectric in MOS devices | Emerging Cross-Sectional Technologies | 56 | Expired |
| US6339013B1 | Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells | Emerging Cross-Sectional Technologies | 55 | Expired |
| US4962065A | Annealing process to stabilize PECVD silicon nitride for application as the gate dielectric in MOS devices | Emerging Cross-Sectional Technologies | 32 | Expired |
| US7510760B2 | Nanoparticle compositions, coatings and articles made therefrom, methods of making and using said compositions, coatings and articles | Emerging Cross-Sectional Technologies | 29 | Expired |
| US6607782B1 | Methods of making and using cubic boron nitride composition, coating and articles made therefrom | Emerging Cross-Sectional Technologies | 28 | Expired |
| US5472370A | Method of planarizing polycrystalline diamonds, planarized polycrystalline diamonds and products made therefrom | Electricity | 26 | Expired |
| US5873992A | Method of electroplating a substrate, and products made thereby | Chemistry; Metallurgy | 24 | Expired |
| US7112545B1 | Passivation of material using ultra-fast pulsed laser | Emerging Cross-Sectional Technologies | 21 | Expired |
| US7687334B2 | Fabrication of large grain polycrystalline silicon film by nano aluminum-induced crystallization of amorphous silicon | Electricity | 17 | Active |
| US5725413A | Apparatus for and method of polishing and planarizing polycrystalline diamonds, and polished and planarized polycrystalline diamonds and products made therefrom | Performing Operations; Transporting | 14 | Expired |
| US6613653B2 | Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells | Emerging Cross-Sectional Technologies | 8 | Expired |
| US7927937B2 | Fabrication of large grain polycrystalline silicon film by nano aluminum-induced crystallization of amorphous silicon | Electricity | 6 | Active |
| US6844248B2 | Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6168744A | Process for sequential multi beam laser processing of materials | Performing Operations; Transporting | 6 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.