Patent · US Expired

Method of making a multilayer thin film structure

US5266446A · kind A · utility

110Cited by
8References
25Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 26, 1992
Grant dateNov 30, 1993
Priority date
Expiry dateMay 26, 2012

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH05K2203/107
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

A method of making a multilayer thin film structure on the surface of a dielectric substrate which includes the steps of: PA0 a. forming a multilayer thin film structure including the steps of: PA1 applying a first layer of dielectric polymeric material on the surface of a dielectric substrate, PA1 applying a second layer of dielectric polymeric material over the first layer of polymeric material wherein the second polymeric material is photosensitive, PA1 imagewise exposing and developing the second polymeric material to form a feature therein, the second layer feature in communication with at least one feature formed in the first polymeric material; and PA0 b. filling the features in the entire multilayer structure simultaneously with conductive material. Preferably, the first layer feature is a via and the second layer feature is a capture pad or wiring channel. Also disclosed is a multilayer thin film structure made by this method.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.