Semiconductor device having film for controlling diffusion of impurity
US5266823A · kind A · utility
22Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 1991 |
| Grant date | Nov 30, 1993 |
| Priority date | — |
| Expiry date | Jun 24, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/856
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to this present invention, a semiconductor device includes source and drain diffusion layers, and a gate electrode formed on a substrate between the source diffusion layer and the drain diffusion layer. In addition, antioxidant films are respectively formed on the source diffusion layer and the drain diffusion layer. These antioxidant films are used for controlling a diffusion rate of an impurity contained in the source diffusion layer and the drain diffusion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.