Inventor · Yokosuka, JP

Yusuke Kohyama

79Patents
20h-index
46Co-inventors
88Inventor score

Filing activity: Jan 23, 1990 → Jun 25, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US5959324A Semiconductor device including an improved terminal structure Electricity 89 Expired
US6222722A Storage capacitor having undulated lower electrode for a semiconductor device Electricity 64 Expired
US5142639A Semiconductor memory device having a stacked capacitor cell structure Electricity 57 Expired
US5555520A Trench capacitor cells for a dram having single monocrystalline capacitor electrode Electricity 56 Expired
US6051859A DRAM having a cup-shaped storage node electrode recessed within an insulating layer Electricity 50 Expired
US5281837A Semiconductor memory device having cross-point DRAM cell structure Electricity 45 Expired
US6403444B2 Method for forming storage capacitor having undulated lower electrode for a semiconductor device Electricity 42 Expired
US6153476A Semiconductor device and method for manufacturing the same Emerging Cross-Sectional Technologies 31 Expired
US5336917A Dynamic memory cell using hollow post shape channel thin-film transistor Electricity 28 Expired
US5482869A Gettering of unwanted metal impurity introduced into semiconductor substrate during trench formation Emerging Cross-Sectional Technologies 27 Expired
US5563085A Method of manufacturing a semiconductor device Electricity 26 Expired
US5616961A Structure of contact between wiring layers in semiconductor integrated circuit device Electricity 25 Expired
US5886411A Semiconductor device using dual damascene technology and method for manufacturing the same Electricity 24 Expired
US6020643A Semiconductor memory device having contact holes of differing structure Electricity 24 Expired
US5977583A Semiconductor memory device including memory cells having a capacitor on bit line structure Electricity 23 Expired
US8138533B2 Semiconductor device with an electrode as an alignment mark, and method of manufacturing the same Electricity 22 Active
US5266823A Semiconductor device having film for controlling diffusion of impurity Electricity 22 Expired
US6720606B1 Dynamic semiconductor memory device having a trench capacitor Electricity 21 Expired
US6329683A Semiconductor memory device and manufacturing method thereof which make it possible to improve reliability of cell-capacitor and also to simplify the manufacturing processes Electricity 21 Expired
US6198122A Semiconductor memory and method of fabricating the same Electricity 20 Expired
US6140673A Semiconductor memory device and fabricating method Electricity 18 Expired
US6774439B2 Semiconductor device using fuse/anti-fuse system Electricity 16 Expired
US6548844B1 Capacitor having a structure capable of restraining deterioration of dielectric film, semiconductor device having the capacitor and method of manufacturing the same Electricity 16 Expired
US6150690A Structure of a capacitor section of a dynamic random-access memory Electricity 15 Expired
US5545926A Integrated mosfet device with low resistance peripheral diffusion region contacts and low PN-junction failure memory diffusion contacts Electricity 14 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.