Field emission structure and method of forming same
US5269877A · kind A · utility
10Cited by
1References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 2, 1992 |
| Grant date | Dec 14, 1993 |
| Priority date | — |
| Expiry date | Jul 2, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2209/0226
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process for making a tip microstructure in amorphous silicon or polysilicon. A layer of nitride is first deposited on the amorphous silicon or polysilicon. Then the amorphous silicon or polysilicon is roughly patterned to form the base of the tip structure. the tip is carved out of the amorphous silicon or polysilicon by using an oxide growth process that is controlled by the amount of dopant in the amorphous silicon or polysilicon. After the tip is carved, the oxide is stripped away exposing the tip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.