Spin on oxygen reactive ion etch barrier
US5270151A · kind A · utility
5Cited by
19References
6Claims
0Family size
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Key dates
| Filing date | Mar 17, 1992 |
| Grant date | Dec 14, 1993 |
| Priority date | — |
| Expiry date | Mar 17, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0757
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Reaction products of organosilane compounds or polydiphenylsilazane compounds and a novolac resin having phenolic groups can be used as O.sub.2 RIE barrier materials in semiconductor etching processes. These materials have low O.sub.2 etch rates and can be spun on to form crack-free thick layers. Particular RIE barrier materials contemplated have the general formula: ##STR1## wherein A is a methyl or phenyl group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.