Atomic layer epitaxy of compound semiconductor
US5270247A · kind A · utility
166Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 1992 |
| Grant date | Dec 14, 1993 |
| Priority date | — |
| Expiry date | Jul 8, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/072
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A heterojunction between In-containing compound semiconductors in which the interface thereof is controlled at an atom level is provided by a process of atomic layer epitaxy (ALE) in which hydrogen gas is utilized as a carrier gas and as a purge gas for a separation of source gases. The time for which the purge gas is supplied can be utilized for controlling the ALE.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.