Method for fabricating an insulating film from a silicone resin using O.sub .
US5270259A · kind A · utility
52Cited by
3References
25Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Mar 11, 1991 |
| Grant date | Dec 14, 1993 |
| Priority date | — |
| Expiry date | Mar 11, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02216
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicone resin is applied on a substrate to form a coating film. The coating film is subjected to a reactive ion etching in an atmosphere containing at least O.sub.2. Thus, the film is inorganized in its surface and has a distribution of the residue, an organic radical, contained therein gradually increasing in the depth thereof. This permits an insulating film having excellent heat endurance to be formed without generation of any cracks. This insulating film is very useful as an interlayer insulating film for multi-layer wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.