Natsuki Yokoyama
61Patents
17h-index
75Co-inventors
87Inventor score
Filing activity: Nov 24, 1987 → Jun 20, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4897709A | Titanium nitride film in contact hole with large aspect ratio | Electricity | 114 | Expired |
| US7402449B2 | Integrated micro electro-mechanical system and manufacturing method thereof | Performing Operations; Transporting | 101 | Expired |
| US5820679A | Fabrication system and method having inter-apparatus transporter | Emerging Cross-Sectional Technologies | 93 | Expired |
| US5981399A | Method and apparatus for fabricating semiconductor devices | Electricity | 67 | Expired |
| US5270259A | Method for fabricating an insulating film from a silicone resin using O.sub . | Electricity | 52 | Expired |
| US6099598A | Fabrication system and fabrication method | Emerging Cross-Sectional Technologies | 51 | Expired |
| US5562800A | Wafer transport method | Emerging Cross-Sectional Technologies | 50 | Expired |
| US5858863A | Fabrication system and method having inter-apparatus transporter | Emerging Cross-Sectional Technologies | 40 | Expired |
| US7045843B2 | Semiconductor device using MEMS switch | Electricity | 40 | Expired |
| US5177589A | Refractory metal thin film having a particular step coverage factor and ratio of surface roughness | Electricity | 38 | Expired |
| US4792842A | Semiconductor device with wiring layer using bias sputtering | Electricity | 33 | Expired |
| US5175017A | Method of forming metal or metal silicide film | Electricity | 32 | Expired |
| US6461957B1 | Method of manufacturing semiconductor device | Electricity | 31 | Expired |
| US7115943B2 | Nonvolatile semiconductor memory device and manufacturing method thereof | Electricity | 29 | Expired |
| US6677230B2 | Method of manufacturing semiconductor device | Electricity | 29 | Expired |
| US5270232A | Process for fabricating field effect transistor | Emerging Cross-Sectional Technologies | 23 | Expired |
| US5601686A | Wafer transport method | Emerging Cross-Sectional Technologies | 17 | Expired |
| US7062344B2 | Fabrication system and fabrication method | Emerging Cross-Sectional Technologies | 16 | Expired |
| US7325457B2 | Sensor and sensor module | Physics | 14 | Active |
| US6103566A | Method for manufacturing semiconductor integrated circuit device having a titanium electrode | Electricity | 14 | Expired |
| US6710383B2 | MISFET semiconductor device having a high dielectric constant insulating film with tapered end portions | Electricity | 8 | Expired |
| US7451656B2 | Semiconductor device embedded with pressure sensor and manufacturing method thereof | Electricity | 8 | Active |
| US7199022B2 | Manufacturing method of semiconductor device | Emerging Cross-Sectional Technologies | 8 | Expired |
| US7270012B2 | Semiconductor device embedded with pressure sensor and manufacturing method thereof | Electricity | 7 | Expired |
| US6204184A | Method of manufacturing semiconductor devices | Electricity | 6 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.